The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1991
Filed:
Mar. 11, 1991
Paige M Holm, Phoenix, AZ (US);
Daniel L Rode, St. Louis, MO (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A semiconductor device structure comprises a semiconductor substrate having a semiconductor layer of the same conductivity type formed on its first surface. A drain contact is formed on the second surface of the substrate and conductive regions having the opposite conductivity type of the substrate are formed in the semiconductor layer and are separated by a predetermined distance. Channel regions having the same conductivity type as the substrate are disposed above the conductive regions and source regions are disposed therein. A shielding region is then formed on the surface of the device structure in the area between the conductive regions. The structure allows for reduced or eliminated gate-drain capacitance, reduced output conductance and increased breakdown voltage capability.