The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Jun. 07, 1988
Toshihiko Kondo, Suwa, JP;
Kazuo Tanaka, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A MOS semiconductor device and method for manufacturing the device includes a semiconductor substrate, a first insulating film formed on the substrate, and a first wiring layer which is formed on, and to lesser width than, the first insulating film. A second insulating film is formed on the first wiring layer. A side wall insulating film is formed on side walls of the first wiring layer and of the second insulating film. The sidewall insulating film is formed in such a manner as to have progressively larger width as the side wall insulating film comes closer to the semiconductor substrate. A second wiring layer is formed in such a manner as to extend from above the first wiring layer, which it is spaced by the second insulating film, to an exposed surface of the semiconductor substrate. The latter exposed surface is situated in proximity to, but laterally spaced from, the first wiring layer. The second insulating film and the side wall insulating film serve as an interlayer insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile