The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Dec. 04, 1990
Koji Shirai, Kawasaki, JP;
Ken Kawamura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device comprises a substrate including a p-type first semiconductor region, an n-type second semiconductor region formed in the first semiconductor region, a first insulating layer formed on surfaces of the first semiconductor region and the second semiconductor region, a first conductive layer formed, via the first insulating layer, over the surface of the second semiconductor region, and set at substantially the same potential as that of the second semiconductor region, an n-type third semiconductor region formed to be spaced apart from the second semiconductor region and formed in the first semiconductor region so that a part of the third semiconductor region overlaps a part of the first conductive layer, via the first insulating layer, a second conductive layer connected to the third semiconductor region through an opening formed in the first insulating layer, and a wiring layer formed on a second insulating layer provided on surfaces of the first and second conductive layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile