The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Sep. 17, 1990
Applicant:
Inventors:
Assignee:
Matsushita Electric Works, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 39 ; 357 91 ;
Abstract
A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.