The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Apr. 01, 1991
Applicant:
Inventors:
Gou-Chung Chi, New Providence, NJ (US);
James N Hollenhorst, New Providence, NJ (US);
Robert A Morgan, Topton, PA (US);
Dirk J Muehlner, Murray Hill, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 16 ; 357 59 ; 385 37 ;
Abstract
Substrate-supported optical device structures such as, e.g., quantum-well infrared detectors/detector arrays are provided with a grating for optical coupling. Preferred gratings are formed in a nonepitaxial layer which, preferably, consists of a material which is different from underlying semiconductor material. Conveniently, a grating pattern is formed by etching, with the underlying material serving as an etch stop. For example, on a GaAs--AlGaAs device, polycrystalline silicon can be deposited and etched in this fashion.