The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 1991

Filed:

Dec. 28, 1989
Applicant:
Inventor:

Yoshihiro Hisa, Itami, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 24 ;
Abstract

A rear surface incident type photodetector device includes spaced apart light absorption regions on a semi-insulating substrate, a semi-insulating layer covering the light absorption regions on the semi-insulating substrate, a first conductivity type semiconductor region disposed on the semi-insulating layer opposite each light absorption regon, and second conductivity type semiconductor regions separating the first conductivity type regions and reaching the semi-insulating layer. A rear surface incident type photodetector device includes spaced apart insulating light absorption regions on a surface of a semi-insulating substrate, first conductivity type semiconductor regions covering the insulating light absorption, regions, and second conductivity type semiconductor regions separating the first conductivity type semiconductor regions and reaching the semi-insulating substrate.


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