The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Oct. 10, 1990
Applicant:
Inventor:
Toshiro Shinohara, Yokosuka, JP;
Assignee:
Nissan Motor Co., Ltd., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 34 ; 357 35 ;
Abstract
A thin film semiconductor device has an n-type collector region formed in a semiconductor thin film on an insulating substrate, a p-type base region formed in the collector region, and an n-type emitter region. The base and emitter regions are formed by successive diffusion steps of p-type impurities and n-type impurities by using the same mask through the same diffusion window in such a manner than the base width is determined by a difference between the lateral diffusion distance of the p-type impurities and the lateral diffusion distance of the n-type impurities from the common diffusion window.