The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Aug. 22, 1989
John D Moran, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Semiconductor device structures having very smooth surfaces and very high doping levels of opposite types present on the same wafer may be plated in the same electroless plating bath without differentiation between the N and P regions or rough and smooth surface regions. This is achieved by a pre-treatment involving coating the wafer surface with a metal salt (e.g., NiCl in glycol and water) and reducing the metal salt in an oxygen free atmosphere (e.g., hydrogen) at a temperature (e.g., >300.degree. C. for Si) sufficient to promote formation of an intermetallic between the reduced metal and the semiconductor substrate. This provides very uniform and effective nucleation sites for the subsequent electroless plating process irrespective of the smoothness, doping type and doping density of the semiconductor surface.