The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Sep. 07, 1990
Yoshihiko Sakai, Kanagawa, JP;
Takehito Hikichi, Kanagawa, JP;
Fuji Xerox Co., Ltd., Tokyo, JP;
Abstract
An image sensor manufacturing method, in which a chromium layer or the tantalum layer as barrier metal is formed on the semiconductor layer as the ohmic contact layer of the thin film transistor switching element (TFT). With use of the chromium layer or the tantalum layer, the semiconductor layers of an n.sup.+ hydrogenated amorphous silicon (n.sup.+ a-Si:H) can be protected when metal, e.g., aluminum, is vapor deposited or deposited by the sputtering method. Accordingly, the characteristic of the semiconductor layers can be kept intact, and consequently the reliability of the image sensor is improved. Further, when the chromium layer or the tantalum layer as barrier metal is formed, the lower electrode portion of the photo detect element is formed using the same layer, in the same photolithograph process. Accordingly, the manufacturing of image sensors is simpler than that of the same in which the photo detect elements and the TFTs are formed in different process steps.