The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Dec. 14, 1989
Moriya Nakahara, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of manufacturing a CMOS semiconductor device includes the step of preparing a substrate having a first region of a second conductivity type serving as prospective source and drain formation regions of a transistor of a first conductivity type, and a second region of the first conductivity type serving as a prospective channel formation region of a transistor of the second conductivity type. The method of manufacturing the device further includes the steps of simultaneously doping an impurity of the first conductivity type having a first concentration in a first depth of each of the first and second regions, and doping an impurity of the first conductivity type having a concentration higher than the first concentration in a second depth smaller than the first depth of the first region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile