The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 1991

Filed:

Aug. 17, 1990
Applicant:
Inventors:

Loic Henry, Lannion, FR;

Claude Vaudry, Lannion, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156662 ; 437228 ;
Abstract

Process for the anisotropic etching of a III-V material and application to surface treatment for epitaxial growth. This process includes the step of etching a III-V material (2) by reactive ionic etching using a gaseous mixture containing by volume 20 to 30% of at least one gaseous hydrocarbon, 30 to 50% of at least one inert gas and 20 to 50% of hydrogen. Said etching can be performed locally with the aid of a Si.sub.3 N.sub.4 etching mask (4a).


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