The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1991
Filed:
Jan. 18, 1990
Applicant:
Inventor:
Susumu Yoshida, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437184 ; 437-2 ; 437-5 ; 437182 ; 437187 ; 148D / ; 148D / ;
Abstract
Semiconductor layers having a p-n junction are formed over the surface of a semiconductor substrate except for a partial surface. On the partial surface of the semiconductor substrate, a region of an electrode to be connected with an external terminal is formed with an insulating film interposed between the same. Bonding connection with the external terminal is performed on the region for connection, to reduce mechanical damage of the semiconductor layers having the p-n junction while improving photoelectric conversion efficiency and reliability of the device.