The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1991
Filed:
Oct. 23, 1990
Applicant:
Inventors:
Oh-Hyun Kwon, Seoul, KR;
Taek-Yong Jang, Seoul, KR;
Jung-Hyun Shin, Seoul, KR;
Won-Taek Choi, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suweon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 44 ; 437978 ; 437979 ; 148D / ;
Abstract
According to the present invention, the incomplete silicon exposure is prevented by the sufficient overetching after the formation of an etching-stop layer on an oxide layer for protecting a conductive layer from the damage of the protective oxide layer when the self-aligned contact window is formed. Therefore, the thickness of the protective oxide layer can be minimized, and the bend of the chip can be improved whereby the following process will be accomplished easily.