The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1991
Filed:
Feb. 14, 1991
Witold P Maszara, Columbia, MD (US);
Anthony L Caviglia, Laurel, MD (US);
Allied-Signal Inc., Morris Township, Morris County, NJ (US);
Abstract
A method for making a lateral bipolar transistor using SOI technology. A base mask is formed on the surface of a silicon island and its sidewalls coated with a layer of silicon dioxide. After local oxidization of the silicon island, emitter and collector regions are implanted using the base mask and the silicon dioxide deposited on the sidewalls of the base mask as a mask. The base mask is then removed and a shallow base contact region is implanted in the base region previously shielded by the base mask. The remaining silicon dioxide deposited on the sidewalls of the base mask form vertical spacers which are used as a self-aligned mask for forming silicide contacts on the emitter, collector and base contact regions. These remaining silicon dioxide vertical spacers physically separate emitter-base and base collector junctions from the highly doped base contact area and electrically isolate the silicide contacts.