The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1991
Filed:
Oct. 30, 1990
Yasumasa Nishimura, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A DRAM has a stacked capacitor. The stacked capacitor is formed of a first portion extending on an insulating layer on the substrate, a cylindrical second portion extending vertically upward from the first portion, and a third portion extending from the second portion to have an eaves-like shape, so as to increase charge storage capacity. The structure increases opposing areas between the electrodes of the capacitor, increasing the capacitor capacity. Between the adjacent capacitors, the projecting eaves-like third portions are overlapped with each other without contact, so as to increase the area of the third portions. By this structure, the marginal space between memory cells can be utilized as capacitor region.