Method for manufacturing a semiconductor

Abstract

A method for manufacturing a BOX structured stack type capacitor of a semiconductor device is disclosed. The method comprises the steps of: defining an active region by forming a field oxide film on a semiconductor substrate of a first conductivity type; forming, on the active region, a gate electrode, a source region and a drain region of a transistor and forming a first conductive layer on a predetermined portion of the field oxide film and forming a first insulating layer on the gate electrode and the first conductive layer; forming a second insulating layer on the resultant structure; forming an opening in order to expose a portion of said source region and then depositing a second conductive layer on the entire surfaces of said second insulating layer and of the exposed substrate; forming a third insulating layer pattern of a saddle type by coating a third insulating layer on the second conductive layer; depositing a third conductive layer on the resultant structure; etching the third conductive layer disposed above the source region; removing said third insulating layer pattern and forming a first electrode pattern of a capacitor; and forming a dielectric film and a fourth conductive layer in turn on the resultant structure. In the method, the capacitance is increased by forming a storage node of a BOX structure and by using the inside and outside of the BOX structure as the effective area of the capacitor.