Mocvd device for growing a semiconductor layer by the metal-organic

Abstract

A MOCVD apparatus comprises a base, an outer vessel extending upward from the base to form a closed space between the base and the outer vessel, an inner vessel provided in the space such that the inner vessel extends upward from the base in correspondence to the outer vessel to form a closed second space and forming a reaction chamber between the outer vessel and the inner vessel, a gas inlet formed at an upper end of the outer vessel for introducing a source gas into the reaction chamber, a gas outlet formed at the base in correspondence to the reaction chamber for evacuating the reaction chamber, the outer vessel and inner vessel being configured to induce a directional flow of gas in the reaction chamber from the gas inlet to the base, a susceptor provided on the inner vessel to extend generally parallel to the directional flow of the gas for supporting a substrate thereon, a plurality of ring-shaped lamps provided in the second space with a substantially concentric relationship with each other such that each ring defines a major plane that extends parallel to an upper major surface of the base, the plurality of ring-shaped lamps being disposed at respective levels separated from each other when measured from the upper major surface of the base, and a control unit for energizing each of the ring-shaped lamps such that the lamps close to the gas inlet is driven by an electric power that is larger than the lamps heating a middle level par of the substrate.