The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1991
Filed:
Jan. 19, 1990
William R Wade, Melbourne, FL (US);
Kenneth A Ports, Indialantic, FL (US);
Harris Corporation, Melbourne, FL (US);
Abstract
Interconnect metal is selectively provided in a network of trenches formed in the top surface of a semiconductor substrate containing multiple circuit devices, electrical contact to regions of which is to be provided. The trench network is formed so that it intersects the device regions, thus exposing the regions at sidewalls of the trench. On the floor of the trench a bottom layer of insulator material is provided, and conductive material (such as tungsten) is deposited on or grown from the trench sidewalls, in order to electrically couple device regions to one another. Because the device interconnect employs a trench network, not only are top surface contact apertures unnecessary, but, with a device region contact (from the trench sidewall) being made along the entire width of the region, device resistance can be decreased and performance improved.