The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1991
Filed:
Feb. 23, 1990
Yoshio Mito, Minoo, JP;
Masatoshi Kitagawa, Hirakata, JP;
Takashi Hirao, Moriguchi, JP;
Yoshitake Yasuno, Kyoto, JP;
Ryuma Hirano, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A heterostructure diode is produced by a plasma CVD process. A defect caused on a silicon single crystal substrate by plasma deposition during formation of an amorphous semiconductor film leads to a problem of increase in the dark current due to the defect level. This defect is compensated for by active hydrogen contained in the amorphous semiconductor film so as to reduce the dark current. This can be effected by an annealing process conducted after formation of the heterojunction diode. The RF power is set low in the beginning period of formation of the semiconductor film. A radiation detecting apparatus is provided in which a plurality of the heterostructure diodes are integrated on a common substrate.