The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1991
Filed:
Sep. 06, 1990
In S Chung, Kyungki, KR;
Dai H Lee, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Kyungki, KR;
Abstract
A method for manufacturing a semiconductor device utilizing a self-aligned contact process is disclosed. The method for manufacturing the same provides a conducting layer which is selectively connected in self-aligned contact, through contact holes, to predetermined electrodes of a plurality of electrodes in a semiconductor device, and provides a thermal oxide layer having a sufficient thickness to insulate the conducting layer from the other electrodes. So that a selective connection between the conducting layer and the predetermined electrode which are to be connected to each other is successively achieved within a more decreased cell size, while maintaining a sufficient thickness of an insulating layer between the conducting layer and the other electrodes which must be insulated from each other.