The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1991
Filed:
Aug. 06, 1990
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 357 30 ;
Abstract
A photovoltaic device has a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material, an amorphous layer of an opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer formed of substantially intrinsic microcrystalline silicon semiconductor material provided between the crystalline layer and the amorphous layer.