The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 1991
Filed:
Nov. 13, 1989
Yu Ohata, Tokyo, JP;
Tsuyoshi Kuramoto, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
There is a semiconductor device in which an n-type layer formed on a p.sup.+ -type substrate is divided into first and second device forming regions by an isolation region and drive circuit devices and an output circuit device are respectively formed in these first and second device forming regions. The output circuit device is a conductivity modulated MOS transistor having the p.sup.+ -type substrate as a drain and the second device forming regoin as a high resistance region whose conductivity is modulated.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile