The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 1991
Filed:
Jul. 05, 1990
Kenji Hirakawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A lateral transistor with a fine structure includes a semiconductor substrate of one conductivity type on which a mesa-shaped projection of opposite conductivity type is provided. The projection has side walls opposed to each other and serves as a collector region. A base region of one conductivity type is provided in one side wall of the projection, while a collector contact region is provided in the other side wall thereof. An emitter region of opposite conductivity type is also formed in the base region. A base contact layer of polysilicon is provided on a field oxide layer and is in contact with the base region at the edge. In the same manner, a collector contact layer of polysilicon provided on the field oxide layer is in contact with the collector contact region at the edge.