The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 1991
Filed:
Feb. 20, 1990
Rajiv R Shah, Plano, TX (US);
Toan Tran, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A process is disclosed with integrated steps for fabricating bipolar and CMOS transistors. Mask, patterning and implanting steps are highly integrated to reduce the fabrication complexity. The integrated steps include a split level polysilicon step wherein PMOS and NMOS gate conductors and a bipolar emitter structure is formed. The polysilicon is heavily doped which forms MOS transistor gate electrodes, and another high impurity concentration area which is later diffused into an underlying bipolar base region. Small area, high performance transistors can be fabricated with laterally extending contact strips. Alignment of electrode metallization patterns is thus less critical.