The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 1991

Filed:

Aug. 23, 1989
Applicant:
Inventors:

Mitsuo Asai, Kokubunji, JP;

Takehisa Hayashi, Kodaira, JP;

Toshio Doi, Kokubunji, JP;

Kenichi Ishibashi, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307443 ; 307446 ; 307451 ; 307481 ; 307542 ; 307546 ; 307570 ; 307572 ;
Abstract

A dynamic semiconductor logic circuit comprising a MOS FET logic section for effecting a high-speed logic operation in response to input logic signals after precharging of an output mode and internal nodes the logic section, a CMOS/BiCMOS output buffer section for outputting a result of the logic operation, and a noise suppression section for preventing erroneous operations without sacrificing the high-speed operation characteristic. The circuit, which is fabricated with 0.5-.mu.m-rule technology and operates at high speed with a low-voltage power source of 4.5 V or less, has a precharging section for precharging the output node and internal nodes of the MOS FET logic section and a noise suppression section for latching the output node of the logic section to the source potential by feeding back the output of an output buffer section in order to enlarge the soft error margin. The latching current is held at less than a predetermined ratio to maintain the high-speed operation characteristic.


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