The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1991
Filed:
Jul. 30, 1990
S Chandrasekhar, Matawan, NJ (US);
Bartley C Johnson, Cranbury, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A monolithic integrated photoreceiver comprising a p-i-n photodiode and a heterojunction bipolar transistor is realized in a structural configuration that allows the photonics and electronics to be separately optimized in addition to maintaining materials compatibility. These desirable features are accomplished by growing the epilayers of the photodiode and heterojunction bipolar transistor in a single epitaxial growth run. The p-i-n epilayers of the photodiode are grown first on a non-patterned substrate, followed by the direct epitaxial growth of the heterostructure bipolar transistor over the photodiode structure. Selective wet chemical etching over a portion of the entire structure was used in order to delineate the mesa structures of the p-i-n photodiode and transistor such that no contiguous conductive semiconductor layer exists therebetween.