The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1991
Filed:
Dec. 19, 1990
Richard D Sivan, Austin, TX (US);
James D Hayden, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A structure and process for fabricating a fully self-aligned high-performance bipolar semiconductor device is disclosed. In accordance with one embodiment of the invention, a substrate is provided having a first surface. A heavily doped buried layer is formed in the substrate extending from the first surface and a lightly doped epitaxial layer overlies the first surface. An isolation region is formed in the epitaxial layer dividing the epitaxial layer into an active surface region and an isolation region. A base electrode is formed on a first portion of the active surface region having an opening which exposes a second portion of the active surface region. An emitter electrode, which is self-aligned to the base electrode, overlies a portion of the base electrode and extends through the opening in the base electrode making contact with the second portion of the active surface region. A collector plug is self-aligned to the active surface region at the edge of the base electrode and extends into the epitaxial layer making contact with the buried layer.