The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1991
Filed:
Sep. 20, 1990
Applicant:
Inventors:
Jerry Yue, Roseville, MN (US);
Michael S Liu, Bloomington, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 28 ; 437 89 ; 437 91 ; 437162 ; 437909 ; 437112 ; 437924 ; 148D / ; 148D / ; 148D / ; 148D / ;
Abstract
A method of forming a self-aligned contact to a transistor component located on a semiconductor substrate comprising forming a transistor component opening in a masking layer overlying a semiconductor substrate and using epitaxial lateral overgrowth to form a self-aligned contact, the epitaxial overgrowth beginning in the masking layer opening at an upper surface of the semiconductor substrate and extending normal to and laterally over the masking layer surface.