The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1991
Filed:
Sep. 18, 1989
Applicant:
Inventor:
Akihiko Asano, Kanagawa, JP;
Assignee:
Fuji Electric Corporation Research and Development Ltd., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 357 30 ; 427 39 ; 427 74 ; 437-4 ; 437100 ; 437101 ;
Abstract
A method of producing a p-type hydrogenated amorphous silicon carbide thin film comprising the steps of preparing a raw material gas mixture consisting of a silicon compound, a hydrocarbon or a fluocarbon, and a boron compound, diluting the raw material gas mixture with hydrogen gas, and decomposing the raw material gas mixture by glow discharge to achieve a resultant film having a prescribed value of photoconductivity with a reduced optical absorption coefficient.