The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1991
Filed:
Jan. 04, 1991
Applicant:
Inventors:
Assignee:
Max-Planck Gesellschaft zur Forderung der Wissenschaften, Gottingen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
372 45 ; 357-4 ; 357 16 ; 357 17 ;
Abstract
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is injection laser in which case the Dirac-delta doped layers 45 and 46 are within intrinsic layer 43. The injection laser is constructed with a hetero structure.