The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 1991
Filed:
Nov. 20, 1990
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 59 ; 357 42 ; 357 237 ; 365154 ;
Abstract
A double-gated MOS type semiconductor memory device having a pair of inverters each of which comprises a bulk MOS transistor formed in a semiconductor substrate and having a first gate electrode on the substrate, and a complementary type MOS transistor stacked over and connected with the bulk MOS transistor, the complementary tyupe MOS transistor being composed of a first insulating film, a semiconductor active layer, a second insulating film and a second gate electrode, laminated upwardly in this order on the first gate electrode, and a process for preparing the double-gated MOS type semiconductor memory device.