The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 1991

Filed:

Jun. 05, 1990
Applicant:
Inventors:

Etsushi Adachi, Amagasaki, JP;

Hiroshi Adachi, Amagasaki, JP;

Osamu Hayashi, Amagasaki, JP;

Kazuo Okahashi, Amagasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 44 ; 427 12 ; 4271263 ; 427226 ; 427251 ; 427252 ; 427255 ; 525474 ; 528 10 ; 528 24 ; 65 31 ; 65 33 ;
Abstract

A material for forming a high purity thin film which includes a silicone ladder polymer dissolved in an organic solvent is applied to a substrate to form a thin film thereon. The thin film is then heated, thereby removing the solvent and simultaneously curing the thin film. Subsequently, the cured thin film is exposed to an oxygen plasma to form a high purity SiO.sub.2 thin film on the substrate. Although the method consists of simple processes and employs low treatment temperatures, it is capable of forming a high purity SiO.sub.2 thin film which exhibits excellent step coverage and high dielectric breakdown strength.


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