The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1991
Filed:
Sep. 20, 1989
Kuniyoshi Yoshikawa, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed is a semiconductor device having a gate electrode consisting of a plurality of layers. The semiconductor device comprises a substrate, a first diffusion layer formed in the substrate, a second diffusion layer formed in the substrate, a floating gate electrode formed on a channel region between the first and second diffusion layers in an electrically floating state, and a control gate electrode formed on the floating gate electrode with an insulating film interposed therebetween. The first and second diffusion layers extend in parallel with each other along the longer side of the floating gate electrode. The control gate electrode extends in parallel with the shorter side of the floating gate electrode. The wiring layers for the first and second diffusion layers extend across the wiring layer for the control gate electrodes. Further, that portion of the first diffusion layer which is positioned adjacent to the floating gate electrode differs in impurity concentration from that portion of the second diffusion layer which is positioned adjacent to the floating gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile