The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1991
Filed:
Apr. 08, 1991
Allen L Solomon, Fullerton, CA (US);
Grumman Aerospace Corporation, Bethpage, NY (US);
Abstract
A process for forming a single trench MOS transistor/capacitor cell for analog signal processing, and the resulting structure, are disclosed. The transistor is formed by foming a first trench in the semiconductor substrate, lining the trench with a layer of insulating material, a layer of conducting material, and filling the trench with a layer of insulator. A doped region is formed adjacent the trench, which serves as a transistor source. A second trench is then formed which extends through and excavates a portion of the first trench. The second trench is lined with a layer of doped material and insulator. The doped material is isolated from the conductive layer lining the first trench. The second trench is then filled with a body of conductive material. The layer of doped material lining the second trench serves as the transistor drain and a capacitor output is extracted from the body of conductive material. The resulting structure acts as a trench gate MOS transistor having a capacitor output in series with the transistor drain. Further, a process is disclosed to include a trench gate complementary transistor in an adjacent trench structure. A complementary transistor circuit with a series connected capacitor is thereby obtained.