The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1991
Filed:
Feb. 20, 1989
George L Schnable, Lansdale, PA (US);
Albert W Fisher, Ringoes, NJ (US);
Harris Corporation, Melbourne, FL (US);
Abstract
SOI islands having doped edges are formed by providing over the surface of a layer of single crystalline silicon on an insulating substrate a masking layer formed of two layers, the lowermost layer adjacent the silicon layer being silicon oxide and the uppermost layer being silicon nitride. The masking layer is defined using standard photolithographic techniques and etching to form the masking layer over only the areas of the silicon layer which are to form the islands. The uncovered portion of the silicon layer is then removed by etching to form the islands. The lowermost layer of the masking layer is then etched laterally away from the edges of the island to expose a portion of the surface of the silicon layer adjacent the edges of the islands. After removing the uppermost layer of the masking layer, the exposed edge portions of the surface of the silicon layer are doped by ion implantation to form the islands with doped edges.