The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1991
Filed:
Nov. 01, 1989
Tomio Nakano, Kawasaki, JP;
Yoshihiro Takemae, Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A complementary semiconductor memory device comprises a memory cell array (73, 100) in which each cell (MC.sub.p ; MC.sub.po) has a first MIS transistor (Q.sub.p); Q.sub.p1, Q.sub.p2) of a first conduction type connected to a word line, a decoding circuit (71) for decoding an input address signal and generating a selecting signal, and a driving circuit (72; 90) having a second MIS transistor (W.sub.80) of a second conduction type opposite to the first conduction type for driving the word line, thereby improving the operation speed thereof, while decreasing the possibility of the destruction of information in each cell by .alpha.-rays. A word drive signal having a negative potential may be used, and the threshold voltage of the second MIS transistor is selected to be greater than an absolute valve of the threshold voltage of the first MIS transistor.