The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 1991

Filed:

Jun. 26, 1990
Applicant:
Inventor:

Yasuo Kobayashi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518902 ; 36518905 ; 365190 ; 365205 ; 3652335 ;
Abstract

A semiconductor memory device capable of reading out stored data at high speed and with low power consumption includes a sense amplifier for amplifying a data signal stored in a selected memory cell, a data latch circuit for latching the output signal of the sense amplifier, a switching circuit for outputting the output signal of the data latch circuit, and an output circuit for receiving the output signal of the sense amplifier and the output signal of the switching circuit and generating a data output signal. It also includes at the power supply side, switching means for keeping the sense amplifier in an operative state as long as data signal is amplified in response to a sense enable signal.


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Kobayashi, Yasuo. (1991). Semiconductor memory having improved data readout scheme (U.S. Patent No. 5051955). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5051955

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