The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1991
Filed:
Dec. 18, 1989
Applicant:
Inventors:
Shooji Kitazawa, Tokyo, JP;
Takashi Ono, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365185 ; 36518909 ; 365218 ; 36523006 ;
Abstract
An electrically erasable nonvolatile semiconductor device of a high density of integration includes a memory matrix array formed of a plurality of MOS memory transistors. In an erasing operation, a voltage to turn off one selected MOS memory transistor is applied to the control gate electrode of the selected MOS memory transistor. At the same time, a voltage near the breakdown voltage of the selected MOS memory transistor is applied to the first electrode (e.g.--source electrode) of the selected MOS memory transistor and a predetermined voltage is applied to the second electrode (e.g.--drain electrode) of the same MOS memory transistor.