The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1991
Filed:
Jan. 11, 1990
Applicant:
Inventors:
Yutaka Yamada, Tsuchiura, JP;
Toshihiko Ibuka, Tsuchiura, JP;
Fumio Orito, Tsuchiura, JP;
Yuichi Seta, Tokyo, JP;
Shin-ichiro Kawabata, Tsuchiura, JP;
Assignees:
Mitsubishi Monsanto Chemical Co, Ltd., Tokyo, JP;
Mitsubishi Chemical Industries, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 22 ; 437 41 ; 437247 ; 437248 ; 437912 ; 437487 ; 437184 ; 156605 ;
Abstract
A method for producing a semiconductor device comprises the steps of: preparing a III.sub.b -V.sub.b group compound single crystalline semiconductor substrate produced by a liquid encapsulated Czochralski process, the single crystalline semiconductor substrate having a carbon concentration of 1.times.10.sup.15 cm.sup.-3 or less, implanting conductive impurity ions into the single crystalline semiconductor substrate and then annealing, and a semiconductor device produced by this method.