The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1991
Filed:
Jan. 05, 1990
Takashi Yamada, Kyoto, JP;
Akihito Nagamatsu, Osaka, JP;
Seiichi Bamba, Kyoto, JP;
Tetsuro Sawai, Osaka, JP;
Haruo Nakano, Osaka, JP;
Kimihiko Nagami, Osaka, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
An active device such as an HEMT is formed on a GaAs substrate, and characteristics of this active device formed are measured. A circuit pattern of a passive circuit device including a serial microstrip line is simulated on the basis of the results of this measurement, and a circuit pattern obtained by the simulation is directly drawn on a substrate to form the passive circuit device, thereby to fabricate an MMIC. Accordingly, the passive circuit device is formed in conformity with the characteristics of the active device for each chip. As a result, the variation in characteristics of the active device is canceled, to obtain an MMIC superior in matching.