The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1991
Filed:
Jan. 26, 1990
Tatsuru Kojima, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A transmitter using a gallium arsenide FET in a power amplifier and having a biassing circuit for generating a gate biassing voltage for the FET, a first power supply for supplying a first power to the biassing circuit and a second power supply for supplying a second power to the power amplifier, the second power being higher in voltage than the first power and being produced at a time delay from production of the first power at a start condition of the transmitter, wherein the first power is supplied to the biassing circuit through a first diode with a voltage drop to thereby reduce the gate biassing voltage below a normal one so that an undesired signal is suppressed at the power amplifier. The second power is delivered to the biassing circuit through a second diode so that the biassing circuit is driven by the second power to produce the normal biassing voltage. Although a multistage amplifier is used for signal amplification prior to the power amplifier and is supplied with a power from the second power supply, a number of stages of the multistage amplifier is not necessary to be increased for attenuating the undesired signal at the start condition because of the signal suppression of the power amplifier.