The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1991
Filed:
Jun. 26, 1990
Takayuki Uda, Ohme, JP;
Tasuku Tanaka, Ohme, JP;
Yoshiaki Emoto, Higashiyamato, JP;
Shigeo Kuroda, Ohme, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor integrated circuit device wherein a conductor film is formed on a front surface of a substrate by a lift-off technique; comprising forming a first resist film on that area of the substrate surface on which the conductor film is not formed, forming a second resist film on the whole substrate surface including the first resist film and a conductor film forming area of the substrate surface, providing a first opening for forming the conductor film in a conductor film forming area of the second resist film and also providing a second opening for forming a dummy conductor film in that area of the second resist film in which the conductor film is not formed, depositing the conductor film on the whole substrate surface including the substrate surface inside the first opening, the first resist film inside the second opening and the second resist film, and removing the second resist film and the first resist film respectively, so as to leave the conductor film inside the first opening and to remove the conductor film on the second resist film and the dummy conductor film on the first resist film.