The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1991
Filed:
Feb. 28, 1990
Akio Nakagawa, Hiratsuka, JP;
Kazuyoshi Furukawa, Kawasaki, JP;
Tsuneo Ogura, Yokohama, JP;
Katsujiro Tanzawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A dielectrically isolated substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semiconductor wafer with a first insulating layer interposed therebetween, a semiconductor layer formed on the second semiconductor wafer, a first groove formed in the semiconductor layer and the second semiconductor wafer so as to reach the first insulating layer, thereby isolating the semiconductor layer and the second semiconductor wafer and a second insulating layer formed on the side face of the first groove or embedded in the first groove. In this dielectrically isolated substrate, a high breakdown voltage element and a low breakdown voltage element are formed in a region isolated by the first groove.