The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
Jan. 04, 1991
Applicant:
Inventors:
Donald R Scifres, San Jose, CA (US);
David F Welch, San Jose, CA (US);
John Endriz, Belmont, CA (US);
William Streifer, deceased, late of Palo Alto, CA (US);
Assignee:
Spectra Diode Laboratories, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01L / ;
U.S. Cl.
CPC ...
372 45 ; 357-4 ; 357 16 ; 357 17 ;
Abstract
Semiconductor heterostructure lasers having at least one lattice mismatched strain layer in the cladding proximate to the active region. Indium or phosphorus may be added in high concentration to form the strain layers. The strain layers may be spaced somewhat apart from the active region or may be adjacent to the active region. In either case, the strain layers decrease transparency current and increase differential gain.