The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
Dec. 01, 1989
Toshiharu Katayama, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device comprising a contact region having reduced contact resistance is provided by the steps of implanting ions of impurities to a predetermined region of a main surface of a semiconductor substrate; forming an impurity diffusion region by applying heat treatment at 400.degree. C.; etching the region from the surface of the semiconductor substrate to the maximum point of an ion concentration to form a metal wiring layer on the exposed surface of the thus formed impurity diffusion region. Since the impurity diffusion region is connected to the metal wiring layer at the maximum point of the ion concentration, the contact resistance can be a low value.