The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
Apr. 27, 1989
Futoshi Tokunoh, Itami, JP;
Katsumi Sato, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A reverse conducting gate turn-off thyristor has a separating layer (26) in isolating zone (Z) for electrically separating into thyristor and diode portion (X, Z) a p type base layer (22) formed on an n type base layer (21). A gate electrode (29) is formed both on the p type base layer (22) and the separating layer. A portion of the gate electrode (29) on said separating layer serves as a gate collecting electrode (29a). Thus, area for the isolating zone (Z) and the gate collecting electrode (29a) become common, so that the efficiency of utilization of the wafer surface can be increased.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile