The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
Apr. 16, 1990
Applicant:
Inventors:
Ludwig Treitinger, Munich, DE;
Emmerich Bertagnolli, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 35 ; 437 32 ; 437 33 ;
Abstract
A circuit structure contains at least one bipolar transistor whose emitter is fashioned as a part of a doped silicon layer grown on a substrate. The doped silicon layer comprises a sidewall extending parallel to its surface normal, the sidewall being covered with a doped silicon structure in contact with the silicon substrate and forms the base of the bipolar transistor. The bipolar transistor comprises a self-aligned, effective emitter with a 50-500 nm.