The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
May. 11, 1990
Applicant:
Inventor:
Martin E Garnett, Los Gatos, CA (US);
Assignee:
Micrel, Inc., Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 238 ; 357 234 ; 357 239 ; 357 2311 ; 357 20 ;
Abstract
An improved process to fabricate a high breakdown voltage MOSFET is disclosed. The process self-aligns the channel to the source and drain and semi self-aligns the gate electrode to the channel. The MOSFET also includes a boron field implant to extend the source and drain. A high voltage gate oxide can be provided.