The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
Jul. 12, 1990
Applicant:
Inventors:
Sakae Tanaka, Tokyo, JP;
Yoshiaki Watanabe, Tokyo, JP;
Assignee:
Seikosha Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357-2 ; 357-4 ; 357 45 ; 357 72 ; 359 59 ;
Abstract
A reverse staggered amorphous silicon thin film transistor array substrate includes an array of amorphous silicon thin film transistors, gate wiring interconnecting the gate electrodes of the amorphous silicon thin film transistors, and source wirings. The transistor array is provided on a thin film transistor array substrate. A protective insulation layer and an amorphous silicon layer having a greater width than the source wiring are provided under the source wiring.