The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1991
Filed:
Mar. 03, 1989
Applicant:
Inventors:
Masahiro Iwamura, Hitachi, JP;
Kozaburo Kurita, Hitachi, JP;
Hideo Maejima, Hitachi, JP;
Tetsuo Nakano, Ome, JP;
Atsuo Hotta, Higashiyamato, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307446 ; 307443 ; 307473 ;
Abstract
In a semiconductor integrated circuit, drain-source paths of an NMOS transistor and a PMOS transistor are connected between the base and emitter of a bipolar transistor, and control signals are applied to gates of the NMOS transistor and the PMOS transistor so as to keep the NMOS transistor and the PMOS transistor at OFF condition when the bipolar transistor is operating and so as to keep the NMOS transistor and the PMOS transistor at ON condition when the bipolar transistor is in the quiescent state.